Demonstration of nanophotonic NOT gate using near-field optically coupled quantum dots

被引:44
作者
Kawazoe, T. [1 ]
Kobayashi, K.
Akahane, K.
Naruse, M.
Yamamoto, N.
Ohtsu, M.
机构
[1] Japan Sci & Technol Agcy, Machida, Tokyo 194004, Japan
[2] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
[3] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
[4] Univ Tokyo, Dept Elect Engn, Tokyo 1138656, Japan
来源
APPLIED PHYSICS B-LASERS AND OPTICS | 2006年 / 84卷 / 1-2期
关键词
D O I
10.1007/s00340-006-2234-x
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device was much lower than that of a conventional photonic device. We also introduce all-optical NAND and NOR gates using coupled quantum dots. Toward an actual nanophotonic device, we discuss the possibility of coupled InAlAs quantum dots. A double layer of InAlAs quantum dots for nanophotonic device operation was prepared using molecular beam epitaxial growth. We obtained a near-field spectroscopy signal, indicating that the InAlAs quantum dots coupled with the optical near field acted as a NOT gate. The experimental results show that the sample has great potential as an actual nanophotonic device.
引用
收藏
页码:243 / 246
页数:4
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