Spectroscopy of one-dimensional excitons in GaAs quantum wires

被引：1

作者：

Akiyama, H

Someya, T

Sakaki, H

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

[2] UNIV TOKYO,JAPAN SCI & TECHNOL CORP,QUANTUM TRANSIT PROJECT,MEGURO KU,TOKYO 153,JAPAN

[3] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 48卷 / 1-2期

关键词：

quantum wire; GaAs; exciton; microscopy; photoluminescence; cleaved edge overgrowth;

D O I：

10.1016/S0921-5107(97)00092-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One-dimensional (1D) properties of excitons have been optically studied in T-shaped GaAs quantum wires formed by the cleaved edge overgrowth method with molecular beam epitaxy. Microscopic photoluminescence spectroscopy at low temperature has been useful both to characterize samples and to investigate 1D physics. (C) 1997 Elsevier Science S.A.

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收藏

页码：126 / 130

页数：5

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