Charge-density-ware current conversion in submicron NbSe3 wires

被引：32

作者：

Mantel, OC

Chalin, F

Dekker, C

van der Zant, HSJ

Latyshev, YI

Pannetier, B

Monceau, P

机构：

[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands

[3] Univ Grenoble 1, Ctr Rech Tres Basses Temp, CNRS, F-38042 Grenoble, France

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.84.538

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the charge-density-wave (CDW) current conversion process in NbSe3 wire structures of mesoscopic dimensions. A significant reduction of the phase-slip voltage associated with this conversion is observed if the spacing between current contacts is smaller than a few mu m. This reduction cannot be explained with existing models of CDW current conversion. We suggest that single phase-slip events play a central role in micron-sized systems. The removal and addition of wave fronts may then become correlated in time. PACS numbers: 72.15.Nj, 71.45.Lr, 73.23.-b.

引用

页码：538 / 541

页数：4