Electrical properties of alumina films by plasma-enhanced atomic layer deposition

被引：98

作者：

Lim, JW ^{[1
]}

Yun, SJ ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Informat Display Device Team, Taejon 305350, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 08期

关键词：

D O I：

10.1149/1.1756541

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Plasma-enhanced atomic layer deposition (PEALD) technique using trimethylaluminum (TMA) precursors and O-2 gas mixed with N-2 gas, was adopted as a promising method for growing Al2O3 thin films with improved electrical properties compared to the conventional ALD. PEALD provides a higher growth rate of 0.18 nm/cycle than ALD does of 0.11 nm/cycle at 100degreesC. Due to superior film density of PEALD compared to that of ALD, excellent breakdown fields of 9 MV/cm were obtained in PEALD Al2O3. The dielectric constants for Al2O3 films grown by PEALD were also higher than constants produced by ALD. (C) 2004 The Electrochemical Society.

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收藏

页码：F45 / F48

页数：4

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