Piezoreflectance study of silicon carbon nitride nanorods

被引：12

作者：

Hsieh, CH

Huang, YS ^{[1
]}

Kuo, PF

Chen, YF

Chen, LC

Wu, JJ

Chen, KH

Tiong, KK

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[4] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

[5] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 202, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期

关键词：

D O I：

10.1063/1.126249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detailed piezoreflectance (PzR) measurements of quasialigned silicon carbon nitride nanorods in the temperature range between 15 and 400 K were performed. The direct band-to-band transition energies E-g(d) at various temperatures were determined accurately through line shape fit of the experimental PzR spectra. The temperature dependence of E-g(d) is analyzed by the Varshni equation [Y. P. Varshni, Physica, (Amsterdam) 34, 149 (1967)] and an expression containing the Bose-Einstein occupation factor for phonons proposed by L. Vina, S. Logothetidis, and M. Cardona [Phys. Rev. B 30, 1979 (1984)]. The parameters that describe the temperature dependence of E-g(d) are evaluated and discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)05115-9].

引用

页码：2044 / 2046

页数：3

共 16 条

[1] Silicon carbonitride: a rival to cubic boron nitride [J].