Growth of 2''InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization

被引：9

作者：

Amon, J ^{[1
]}

Zemke, D ^{[1
]}

Hoffmann, B ^{[1
]}

Muller, G ^{[1
]}

机构：

[1] FREIBERGER ELEKT WERKSTOFFE GMBH,FREIBERG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00039-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InP and GaAs crystals with a diameter of 2 '' were grown by the vertical gradient freeze (VGF) technique. It is demonstrated by electrical and optical investigations that the VGF technique allows the growth of crystals with a uniform distribution of the dopants in both a macroscopic and a microscopic scale. The etch pit density in the VGF grown crystals is reduced compared to LEC-grown ones. Numerical modelling was used to optimize thermal boundary conditions.

引用

收藏

页码：646 / 650

页数：5

相关论文

共 10 条

[1] GROWTH OF 2 INCH GE - GA CRYSTALS BY THE DYNAMIC VERTICAL GRADIENT FREEZE PROCESS AND ITS NUMERICAL MODELING INCLUDING TRANSIENT SEGREGATION [J].

HOFMANN, D ;

JUNG, T ;

MULLER, G .

JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :213-218

[2] MODEL-BASED DIRECTIONAL SOLIDIFICATION OF SEMICONDUCTOR-MATERIALS BY THE VGF-TECHNIQUE USING MULTIZONE COLD-WALL FURNACE TECHNOLOGY [J].

HOFMANN, D ;

JUNG, T ;

SCHAFER, N ;

ZEMKE, D ;

MULLER, G .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1993, 173 (1-2) :67-71

[3] A MECHANISM FOR TWIN FORMATION DURING CZOCHRALSKI AND ENCAPSULATED VERTICAL BRIDGMAN GROWTH OF III-V COMPOUND SEMICONDUCTORS [J].

HURLE, DTJ .

JOURNAL OF CRYSTAL GROWTH, 1995, 147 (3-4) :239-250

[4] INFRARED-ABSORPTION OF N-TYPE AND P-TYPE FE-DOPED INP AND MAPPING OF THE FE DISTRIBUTION [J].

MOSEL, F ;

SEIDL, A ;

HOFMANN, D ;

MULLER, G .

APPLIED SURFACE SCIENCE, 1991, 50 (1-4) :364-368

[5] INP - THE BASIC MATERIAL OF INTEGRATED OPTOELECTRONICS FOR FIBER COMMUNICATION-SYSTEMS [J].

MULLER, G .

PHYSICA SCRIPTA, 1991, T35 :201-209

[6]

MULLER G, 1993, NEW YORK P, V60

[7]

TATSUMI P, 1989, P 1 INT C INP REL MA, P18

[8] A NEW MODEL FOR THE CALCULATION OF DISLOCATION FORMATION IN SEMICONDUCTOR MELT GROWTH BY TAKING INTO ACCOUNT THE DYNAMICS OF PLASTIC-DEFORMATION [J].

VOLKL, J ;

MULLER, G .

JOURNAL OF CRYSTAL GROWTH, 1989, 97 (01) :136-145

[9]

VOLKL J, 1987, E MRS MIG, V16, P141

[10] GROWTH AND CHARACTERIZATION OF 2-IN INP CRYSTALS BY THE VERTICAL GRADIENT FREEZE TECHNIQUE [J].

ZEMKE, D ;

GRANT, I ;

WITTMANN, G ;

MULLER, G .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3) :91-94