Itinerant f-electron antiferromagnetism in UGa3

被引:19
作者
Kaczorowski, D [1 ]
Hauser, R [1 ]
Czopnik, A [1 ]
机构
[1] TECH UNIV VIENNA,INST EXPT PHYS,A-1040 VIENNA,AUSTRIA
来源
PHYSICA B | 1997年 / 230卷
关键词
itinerant antiferromagnetism; antiferromagnetism; pressure dependence; UGa3;
D O I
10.1016/S0921-4526(96)00538-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Single crystals of the antiferromagnetic compound UGa3 were studied by means of pressure dependent electrical resistivity measurements. The Neel temperature was found to decrease with rising pressure at the rate of -1.4 K/bar. A rapid reduction of T-N was also observed in the electrical resistivity studies of the pseudobinary system U(Ga1-xGex)(3), where the substitution for Ga of a smaller atom was equivalent to a positive chemical pressure. The results corroborate an itinerant-electron nature of the magnetism in UGa3 which was suggested before on the basis of the peculiar magnetic and thermodynamic properties of this compound.
引用
收藏
页码:35 / 38
页数:4
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