Some properties of a-C:N films prepared by KrF laser ablation

被引：6

作者：

Jelinek, M

Bulir, J

Hrdina, J

Vorlicek, V

Perina, V

Simeckova, M

Jastrabik, L

机构：

[1] Institute of Physics, Acad. Sci. Czech Rep., 18040 Praha 8

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷 / 09期

关键词：

D O I：

10.1007/BF01742456

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thin a-C:N films were prepared by pulsed laser ablation using a KrF excimer laser and a graphite target. The influence of the substrate temperature T-s (27 degrees C and 330 degrees C), and the nitrogen gas ambient pressure p(N) (1.5 Pa, 13.3 Pa and 40 Pa) on the film properties was studied. The films were characterized by scanning electron microscopy, Rutherford backscattering, spectroscopic ellipsometry and by Raman scattering. The nitrogen content in the films was in the range from 20 to 31 at.%, and those of oxygen from 5.6 to 10.7 at.%. For lower p(N) and T-s the film delamination was observed.

引用

收藏

页码：863 / 872

页数：10

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