Laser diodes integrated with butt-jointed spotsize converter fabricated on 2-in wafer

被引：8

作者：

Wada, M

Okamoto, H

Kishi, K

Kadota, Y

Okamoto, M

Kondo, Y

Sakai, Y

Oohashi, H

Suzaki, Y

Tohmori, Y

Nakao, M

Itaya, Y

Yamamoto, M

机构：

[1] NTT Opto-electronics Laboratories, Atsugi

[2] Waseda University, Tokyo

[3] NTT Elec. Communication Laboratory, Osaka

[4] Research Planning Department, NTTT Sci. Core Technol. Lab. Grp.

[5] Inst. Electronics, Info. Commun. E., Japan Society of Applied Physics, IEEE Lasers and Electro-Opt. Society

[6] Chiba University, Chiba

[7] Intgd. Opto-electronics Laboratory, NTT Opto-electronics Laboratories

[8] Inst. Electronics, Info. Commun. E., Japan Society of Applied Physics

[9] Kanazawa University, Ishikawa

[10] Atsugi Elec. Commun. Laboratories, Nippon Telegraph and Tel. Corp., Kanagawa

[11] Hiroshima University, Hiroshima

[12] Shizuoka University, Shizuoka

[13] Osaka University, Osaka

[14] Physical Society of Japan, Japan Society of Applied Physics, IEEE/LEOS

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1109/50.557566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser diodes integrated with spotsize converter by butt-joint technology combined with selective area metal organic vapor phase epitaxial (MOVPE) growth have been successfully fabricated. Satisfactory uniformity, reproducibility (>90%) and tolerance for low threshold current, a narrow emitted beam, low optical coupling loss to fiber (<-2.4 dB) are obtained by using 2-in full wafer fabrication technology in the experimental fabrication. To investigate the tolerance in fabrication, the characteristic dependence on the variation of the wet etching time just before the butt-joint MOVPE growth and also on the mesa stripe width are investigated. A wide tolerance for these fabrication parameters is confirmed. The results indicate that the butt-joint technology is a useful and reliable process for realizing spotsize converters of the present type and also suggest that the technology is widely applicable to various photonic integrated circuits.

引用

页码：498 / 504

页数：7

共 17 条

[1] INP-BASED MULTIPLE-QUANTUM-WELL LASERS WITH AN INTEGRATED TAPERED BEAM EXPANDER WAVE-GUIDE [J].