Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers

被引：16

作者：

Frigeri, C

Baeumler, M

Migliori, A

Müller, S

Weyher, JL

Jantz, W

机构：

[1] CNR, Inst Maspec, I-43100 Parma, Italy

[2] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

[3] CNR, Ist Lamel, I-40100 Bologna, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期

关键词：

optical analysis; structural analysis; InGaAlAs/AlGaAs lasers;

D O I：

10.1016/S0921-5107(99)00102-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The failure of high power InGaAlAs/AlGaAs double quantum well (DQW) lasers has been studied by plan-view photoluminescence (PL), cross sectional (002) dark field TEM and X-ray microanalysis. The lasers were operated at elevated driving currents beyond rollover in order to stimulate and analyse degradation processes encountered during accelerated lifetime testing. The damage consists of elliptical areas within which the original DQW structure was destroyed due to outdiffusion of Al into the confinement layers. The damaged areas started from the output mirror indicating that the device temperature was somewhat higher near the facet. The Ga vacancies governing the Al diffusion were likely produced by a mechanism of recombination enhanced defect reaction (REDR). The dislocations always present in the damaged areas are expected to be generated by the point defects produced by REDR as well as by localized thermal stresses. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：209 / 214

页数：6

共 26 条

[1]

BAEUMLER M, 1997, I PHYS C SER, V160, P467

[2] GROWTH OF INALGAAS STRAINED-QUANTUM-WELL STRUCTURES FOR RELIABLE 0.8-MU-M LASERS [J].