MODEL FOR DEGRADATION OF BAND-GAP PHOTOLUMINESCENCE IN GAAS

被引：21

作者：

GUIDOTTI, D

HOVEL, HJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.99957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1411 / 1413

页数：3

共 13 条

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[2]

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[9] DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].

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