DEFECT-ENHANCED ANNEALING BY CARRIER RECOMBINATION IN GAAS

被引：47

作者：

STIEVENARD, D

BOURGOIN, JC

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8410 / 8415

页数：6

共 17 条

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[7]

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[8] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J].

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[9]

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[10]

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