RECOMBINATION ENHANCED DEFECT ANNEALING IN N-INP

被引：32

作者：

BENTON, JL

LEVINSON, M

MACRANDER, AT

TEMKIN, H

KIMERLING, LC

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：566 / 568

页数：3

共 12 条

[1]

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[2]

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[8] DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].

LEVINSON, M ;

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[9]

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[10] DEFECTS IN LOW-TEMPERATURE ELECTRON-IRRADIATED INP [J].

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