DEFECTS IN LOW-TEMPERATURE ELECTRON-IRRADIATED INP

被引：46

作者：

SUSKI, J ^{[1
]}

SIBILLE, A ^{[1
]}

BOURGOIN, J ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,BAGNEUX LAB,F-92220 BAGNEUX,FRANCE

来源：

关键词：

D O I：

10.1016/0038-1098(84)90443-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：875 / 878

页数：4

共 15 条

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[3] BOURGOIN JC, 1983, SPRINGER SERIES SOLI
[4] BRAILOVSKII EY, 1982, PHYS STATUS SOLIDI A, V71, P563, DOI 10.1002/pssa.2210710232
[5] KENNEDY TA, 1981, I PHYS C SER, V59, P257
[6] LELOUP J, 1977, I PHYS C SER, V31, P372
[7] DEFECT STATES IN ELECTRON BOMBARDED N-INP
LEVINSON, M
BENTON, JL
TEMKIN, H
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 990 - 992
[8] ELECTRON-BOMBARDMENT INDUCED DEFECT STATES IN P-INP
LEVINSON, M
TEMKIN, H
BONNER, WA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 423 - 432
[9] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP
SIBILLE, A
BOURGOIN, JC
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 956 - 958
[10] ELECTRIC-FIELD EFFECTS ON RADIATION DEFECTS ANNEALING IN P-INP
SIBILLE, A
[J]. SOLID STATE COMMUNICATIONS, 1983, 46 (09) : 673 - 675