ELECTRIC-FIELD EFFECTS ON RADIATION DEFECTS ANNEALING IN P-INP

被引：7

作者：

SIBILLE, A

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 46卷 / 09期

关键词：

D O I：

10.1016/0038-1098(83)90504-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：673 / 675

页数：3

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共 9 条

[1] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM
BARUCH, P
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 653 - &
[2] KIMERLING LC, 1979, I PHYS C SER, V46, P56
[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[4] THE MOTION OF DEEP DONOR CENTERS IN REVERSE BIASED NORMAL-GAAS SURFACE-BARRIER DIODES
PEARTON, SJ
TAVENDALE, AJ
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01): : K75 - K78
[5] MOBILITY OF COPPER CENTERS IN REVERSE-BIASED GERMANIUM JUNCTION DIODES
PEARTON, SJ
TAVENDALE, AJ
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 176 - 178
[6] ION DRIFT IN AN N-P JUNCTION
PELL, EM
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302
[7] PONS D, 1980, I PHYS C SER, V59, P269
[8] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP
SIBILLE, A
BOURGOIN, JC
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 956 - 958
[9] WATKINS GD, 1979, I PHYSICS C SERIES, V46, P16