MOBILITY OF COPPER CENTERS IN REVERSE-BIASED GERMANIUM JUNCTION DIODES

被引：10

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：176 / 178

页数：3

共 15 条

[1] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J].

BARUCH, P .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :653-&

[2]

BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P173

[3] THE DIFFUSION OF HYDROGEN IN SINGLE-CRYSTAL GERMANIUM [J].

FRANK, RC ;

THOMAS, JE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :144-151

[4] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].

FULLER, CS ;

SEVERIENS, JC .

PHYSICAL REVIEW, 1954, 96 (01) :21-24

[5] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[6] HYDROGEN-MULTIVALENT ACCEPTOR COMPLEXES IN HIGH-PURITY GERMANIUM [J].

HALLER, EE ;

HUBBARD, GS ;

HANSEN, WL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (01) :48-52

[7] DEEP LEVEL TRANSIENT SPECTROSCOPY OF HIGH-PURITY GERMANIUM DIODES-DETECTORS [J].

HALLER, EE ;

LI, PP ;

HUBBARD, GS ;

HANSEN, WL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :265-270

[8]

HALLER EE, 1979, DEFECTS RAD EFFECTS, P205

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10]

MILNES AG, 1968, DEEP IMPURITIES SEMI, P40

← 1 2 →