DEEP LEVEL TRANSIENT SPECTROSCOPY OF HIGH-PURITY GERMANIUM DIODES-DETECTORS

被引：41

作者：

HALLER, EE

LI, PP

HUBBARD, GS

HANSEN, WL

机构：

[1] Lawrence Berkeley Laboratory, University of California, Berkeley

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/TNS.1979.4329643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep Level Transient Spectroscopy (DLTS)5 has been applied for the first time to high-purity germanium p-i-n diodes. Using the correlator technique,6 a large number of peaks due to acceptor levels in the forbidden band have been observed. The levels due to substitutional copper, to copper-hydrogen complexes and to divacancy-hydrogen defects have been positively identified. Several unknown levels have been discovered. The results obtained with DLTS are in excellent agreement with results from Hall-effect measurements. DLTS is the perfect tool to follow the creation and annealing of radiation defects. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：265 / 270

页数：6

共 7 条

[1] ARMANTROUT GA, 1969, UCRL50485 LAWR LIV L
[2] FAST AND SLOW QUENCHING DEFECTS IN GERMANIUM
HALL, RN
SOLTYS, TJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (01) : 385 - 390
[3] HALLER EE, 1977, I PHYS C SERIES, V31, P309
[4] Lang D.V., 1974, J APPL PHYS, V45, P3022
[5] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS
MILLER, GL
RAMIREZ, JV
ROBINSON, DAH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2638 - 2644
[6] EFFECTS OF CARRIER TRAPPING IN SEMICONDUCTOR GAMMA-RAY SPECTROMETERS
TRAMMELL, R
WALTER, FJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1969, 76 (02): : 317 - +
[7] HIGH-PURITY GERMANIUM - LOW-TEMPERATURE HALL ANALYSES
WICHNER, R
SWIERKOW.SP
ARMANTRO.GA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 273 - 278

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