DYNAMIC DEFECT REACTIONS INDUCED BY MULTIPHONON NONRADIATIVE RECOMBINATION OF INJECTED CARRIERS AT DEEP LEVELS IN SEMICONDUCTORS

被引：87

作者：

SUMI, H

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 08期

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D O I：

10.1103/PhysRevB.29.4616

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：4616 / 4630

页数：15

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