A Si 1.8 GHz RLC filter with tunable center frequency and quality factor

被引：74

作者：

Pipilos, S

Tsividis, YP

Fenk, J

Papananos, Y

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

[2] SIEMENS AG,SEMICOND DIV,D-81541 MUNICH,GERMANY

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 10期

关键词：

D O I：

10.1109/4.540064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A second-order active bandpass filter using integrated inductors was implemented in Si bipolar technology. The filter uses special techniques to make the quality factor and the center frequency tunable. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has 1 dB compression dynamic range of 40 dB, and draws 8.7 mA from a 2.8 V supply.

引用

页码：1517 / 1525

页数：9