Sacrificial-layer atomic layer deposition for fabrication of non-close-packed inverse-opal photonic crystals

被引:57
作者
Graugnard, Elton [1 ]
King, Jeffrey S. [1 ]
Gaillot, Davy P. [1 ]
Summers, Christopher J. [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
D O I
10.1002/adfm.200500841
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A method is presented for predicting and precisely controlling the structure of photonic crystals fabricated using sacrificial-layer atomic layer deposition. This technique provides a reliable method for fabrication of high-quality non-close-packed inverse shell opals with large static tunability and precise structural control. By using a sacrificial layer during opal infiltration, the inverse-opal pore size can be increased with sub-nanometer resolution and without distorting the lattice to allow for a high degree of dielectric backfilling and increased optical tunability. For a 10% sacrificial layer, static tunability of 80% is predicted for the inverse opal. To illustrate this technique, SiO2 opal templates were infiltrated using atomic layer deposition of ZnS, Al2O3, and TiO2. Experimentally, a static tunability of over 600 nm, or 58%, was achieved and is well described by both a geometrical model and a numerical simulation algorithm. When extended to materials of higher refractive index, this method will alow the facile fabrication of 3D photonic crystals with optimized photonic bandgaps.
引用
收藏
页码:1187 / 1196
页数:10
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共 30 条
  • [1] Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres
    Blanco, A
    Chomski, E
    Grabtchak, S
    Ibisate, M
    John, S
    Leonard, SW
    Lopez, C
    Meseguer, F
    Miguez, H
    Mondia, JP
    Ozin, GA
    Toader, O
    van Driel, HM
    [J]. NATURE, 2000, 405 (6785) : 437 - 440
  • [2] Photonic band gap formation in certain self-organizing systems
    Busch, K
    John, S
    [J]. PHYSICAL REVIEW E, 1998, 58 (03): : 3896 - 3908
  • [3] Photonic bandgap optimization in inverted fcc photonic crystals
    Doosje, M
    Hoenders, BJ
    Knoester, J
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2000, 17 (04) : 600 - 606
  • [4] Non-close-packed artificial opals
    Fenollosa, R
    Meseguer, F
    [J]. ADVANCED MATERIALS, 2003, 15 (15) : 1282 - +
  • [5] Photonic band engineering in opals by growth of Si/Ge multilayer shells
    García-Santamaría, F
    Ibisate, M
    Rodríguez, I
    Meseguer, F
    López, C
    [J]. ADVANCED MATERIALS, 2003, 15 (10) : 788 - +
  • [6] Low-temperature Al2O3 atomic layer deposition
    Groner, MD
    Fabreguette, FH
    Elam, JW
    George, SM
    [J]. CHEMISTRY OF MATERIALS, 2004, 16 (04) : 639 - 645
  • [8] High-energy photonic bandgap in Sb2S3 inverse opals by sulfidation processing
    Juárez, BH
    Ibisate, M
    Palacios, JM
    López, C
    [J]. ADVANCED MATERIALS, 2003, 15 (04) : 319 - 323
  • [9] Conformally back-filled, non-close-packed inverse-opal photonic crystals
    King, JS
    Gaillot, DP
    Graugnard, E
    Surnmers, CJ
    [J]. ADVANCED MATERIALS, 2006, 18 (08) : 1063 - +
  • [10] TiO2 inverse opals fabricated using low-temperature atomic layer deposition
    King, JS
    Graugnard, E
    Summers, CJ
    [J]. ADVANCED MATERIALS, 2005, 17 (08) : 1010 - +