TiO2 inverse opals fabricated using low-temperature atomic layer deposition

被引：191

作者：

King, JS ^{[1
]}

Graugnard, E ^{[1
]}

Summers, CJ ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 08期

关键词：

D O I：

10.1002/adma.200400648

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality inverse-opal photonic crystals (see Figure) are formed by TiO2 infiltration and subsequent removal of SiO2 opal templates. Low-temperature atomic layer deposition followed by annealing yields highly conformal infiltrations with extremely smooth surfaces (less than 1 nm root-mean-square roughness) and filling fractions of similar to 88%. Photonic-bandgap properties were determined using UV-vis reflectivity and transmission measurements.

引用

页码：1010 / +

页数：5

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