Characterization of UV-induced radiation damage to Si-based photodiodes

We have made direct measurements of the internal quantum efficiency and the reflectivity of W-damaged silicon photodiodes in the spectral range of 125 nm to 320 nm. The above quantities, coupled with absolute spectral responsivities, may yield unique information leading to the identification of the mechanisms responsible for the degradation of performance of the silicon photodiodes in the ultraviolet. The measurements were made using synchrotron radiation from the NIST synchrotron ultraviolet radiation facility (SURF) and an absolute cryogenic radiometer as a primary standard detector.