A 300MHz 25μA/Mb leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

被引：33

作者：

Yamaoka, M ^{[1
]}

Shinozaki, Y ^{[1
]}

Maeda, N ^{[1
]}

Shimazaki, Y ^{[1
]}

Kato, K ^{[1
]}

Shimada, S ^{[1
]}

Yanagisawa, K ^{[1
]}

Osada, K ^{[1
]}

机构：

[1] Hitachi Ltd, Tokyo, Japan

来源：

2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2004年 / 47卷

关键词：

D O I：

10.1109/ISSCC.2004.1332810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：494 / 495

页数：2

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Bhavnagarwala, AJ ;

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Immediato, M ;

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Haen, AM .

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[2]

KAMEI T, 2004, ISSCC PAPERS

[3] A 90 nm low power 32K-byte embedded SRAM with gate leakage suppression circuit for mobile applications [J].

Nii, K ;

Tenoh, Y ;

Yoshizawa, T ;

Imaoka, S ;

Tsukamoto, Y ;

Yamagami, Y ;

Suzuki, T ;

Shibayama, A ;

Makino, H ;

Iwade, S .

2003 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2003, :247-250

[4]

Osada K., 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), P168, DOI 10.1109/ISSCC.2001.912589

[5]

Osada K, 2003, ISSCC DIG TECH PAP I, V46, P302

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