Realization of two-dimensional optical devices using photonic band gap structures on silicon-on-insulator

被引：8

作者：

Charvolin, T ^{[1
]}

Hadji, E

Picard, E

Zelsman, M

Assous, M

Dalzotto, B

Nier, ME

Tedesco, S

Letartre, X

Rojo-Romeó, P

Seassal, C

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Matiere Condensee, F-38054 Grenoble 9, France

[2] CEA Grenoble, LETI, Dept Technol Silicium, F-38054 Grenoble, France

[3] Ecole Cent Lyon, LEOM, F-69131 Ecully, France

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

silicon-on-insulator; CMOS technology; optical device; photonic crystal;

D O I：

10.1016/S0167-9317(02)00480-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results on the fabrication of optical devices based on photonic crystals on silicon-on insulator substrates. Guides, microcavities, add-drop filters have been obtained with process compatible with CMOS technologies. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：545 / 548

页数：4