Crystallinity and thickness control of well-ordered ultra-thin Al2O3 film on NiAl(110)

被引：27

作者：

Yoshitake, M ^{[1
]}

Mebarki, B ^{[1
]}

Lay, TT ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan

来源：

SURFACE SCIENCE | 2002年 / 511卷 / 1-3期

关键词：

aluminum oxide; insulating films; epitaxy; crystallization; low energy electron diffraction (LEED); auger electron spectroscopy;

D O I：

10.1016/S0039-6028(02)01567-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial film of well-ordered ultra-thin (0.5 nm) Al2O3 is known to grow on NiAl(1 1 0) by 1200 L oxygen introduction. We found that the crystallinity of the epitaxial film was improved by introducing 1200 L oxygen at lower pressure. Control of the thickness of the epitaxial Al2O3 film was also achieved, by multiple-oxidation, for the first time. Successful thickness control of epitaxial Al2O3 film in the range of 0.5-1.4 nm is considered an important step toward a tunneling electron emitter device, as well as basic research for model catalysts. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：L313 / L318

页数：6

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