The planar 6H-SiC ACCUFET: A new high-voltage power MOSFET structure

被引：59

作者：

Shenoy, PM

Baliga, BJ

机构：

[1] Power Semiconductor Research Center, North Carolina State University, Raleigh

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 12期

关键词：

D O I：

10.1109/55.644080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel planar accumulation channel SIC MOSFET structure is reported in this paper. The problems of gate oxide rupture and poor channel conductance previously reported in SiC UMOSFET's are solved by using a buried P+ layer to shield the channel region. The fabricated 6H-SiC unterminated devices had a blocking voltage of 350 V with a specific on-resistance of 18 m Omega.cm(2) at room temperature for a gate bias of only 5 V. This measured specific on-resistance is within 2.5x of the value calculated for the epitaxial drift region (10(16) cm(-3), 10 mu m), which is capable of supporting 1500 V.

引用

页码：589 / 591

页数：3

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