Electronic band structure of HgSe from Fourier transform spectroscopy

被引:31
作者
von Truchsess, M [1 ]
Pfeuffer-Jeschke, A [1 ]
Becker, CR [1 ]
Landwehr, G [1 ]
Batke, E [1 ]
机构
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
关键词
D O I
10.1103/PhysRevB.61.1666
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magneto-optical investigations were performed at liquid helium temperatures with Fourier transform spectroscopy to clarify the electronic band structure of HgSe. Two characteristic sets of interband transitions were observed that allow us to determine the band structure without the necessity of referring to a theoretical model. Our experiment demonstrates unambiguously that HgSe is a semimetal with inverted-type electronic-band structure and not a semiconductor, as was recently deduced from photoemission spectroscopy.
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收藏
页码:1666 / 1669
页数:4
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