Quantifying oxygen diffusion in ZnO nanobelt

被引：26

作者：

Liu, Jin

Gao, Puxian

Mai, Wenjie

Lao, Changshi

Wang, Zhong L. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

D O I：

10.1063/1.2236214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is presented for quantifying oxygen diffusion behavior in a nanodevice fabricated using individual ZnO nanowire/nanobelt. A nanodevice was built using a single nanobelt. Defects are introduced into nanobelt during specific nanofabrication procedure. Then, after the device being exposed to atmosphere for several days, oxygen in air diffused into the nanobelt and significantly changed the conductivity of the device. By comprising the experimentally measured conductivity and that of simulated result, the diffusion coefficient of oxygen in ZnO nanowires/nanobelts has been derived. (c) 2006 American Institute of Physics.

引用

页数：3

共 12 条

[1]

[Anonymous], IEEE C HIGH DENS MIC

[2] Field-effect transistors based on single semiconducting oxide nanobelts [J].