Progress and outlook for MRAM technology

被引：363

作者：

Tehrani, S ^{[1
]}

Slaughter, JM ^{[1
]}

Chen, E ^{[1
]}

Durlam, M ^{[1
]}

Shi, J ^{[1
]}

DeHerrera, M ^{[1
]}

机构：

[1] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

giant magnetoresistance; GMR; magnetic tunnel junction; MTJ; magnetoresistive random access memory; MRAM;

D O I：

10.1109/20.800991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM), a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described, This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market.

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页码：2814 / 2819

页数：6

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