Effects of precursors on nucleation in atomic layer deposition of HfO2

被引：42

作者：

Aarik, J

Aidla, A

Kikas, A

Käämbre, T

Rammula, R

Ritslaid, P

Uustare, T

Sammelselg, V

机构：

[1] Univ Tartu, Inst Phys, EE-51010 Tartu, Estonia

[2] Univ Tartu, Inst Chem Phys, EE-51013 Tartu, Estonia

来源：

APPLIED SURFACE SCIENCE | 2004年 / 230卷 / 1-4期

关键词：

hafnium dioxide; atomic layer deposition; nucleation; surface structure;

D O I：

10.1016/j.apsusc.2004.02.048

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer deposition of hafnium dioxide (HfO2) on silicon substrates was studied. It was revealed that due to low adsorption probability of HfCl4 on silicon substrates at higher temperatures (450-600 degreesC) the growth was non-uniform and markedly hindered in the initial stage of the HfCl4-H2O process. In the HfI4-H2O and HfI4-O-2 processes, uniform growth with acceptable rate was obtained from the beginning of deposition. As a result, the HfI4-H2O and HfI4-O-2 processes allowed deposition of smoother, more homogeneous and denser films than the HfCl4-H2O process did. The crystal structure developed, however, faster at the beginning of the HfCl4-H2O process. (C) 2004 Elsevier B.V. All rights reserved.

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页码：292 / 300

页数：9

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