Surface emission of InxGa1-xN epilayers under strong optical excitation

被引：9

作者：

Jiang, HX ^{[1
]}

Lin, JY ^{[1
]}

Khan, MA ^{[1
]}

Chen, Q ^{[1
]}

Yang, JW ^{[1
]}

机构：

[1] APA OPT INC,BLAINE,MN 55449

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.118456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron-hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry-Perot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on m-nitride wide-band-gap semiconductors. (C) 1997 American Institute of Physics.

引用

页码：984 / 986

页数：3

共 11 条

[1]

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[2]

ASIF KM, 1995, APPL PHYS LETT, V66, P1083

[3] NEUTRAL-DONOR-BOUND EXCITON RECOMBINATION DYNAMICS IN GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].