X-ray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films

被引:52
作者
Kumar, S [1 ]
Butcher, KSA [1 ]
Tansley, TL [1 ]
机构
[1] MACQUARIE UNIV, DEPT PHYS, SEMICOND SCI & TECHNOL LABS, SYDNEY, NSW 2109, AUSTRALIA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 05期
关键词
D O I
10.1116/1.580188
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Carbon nitride thin films prepared by radio frequency reactive sputtering of graphite in pure nitrogen plasma have been characterized by x-ray photoelectron spectroscopy (XPS) for probing the chemical bonding in the films. The multiple binding energy values obtained for the C 1s and N 1s photoelectrons in the film suggest that both the C and N atoms exhibit at least three types of chemical states, manifestative of different types of the C-N bonding present in the material. The presence of theoretically predicted beta-C3N4 phase in our C-N films has been suggested on the basis of XPS and optical data. (C) 1996 American Vacuum Society.
引用
收藏
页码:2687 / 2692
页数:6
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