Transient enhanced diffusion after laser thermal processing of ion implanted silicon

被引：32

作者：

Jones, KS ^{[1
]}

Banisaukas, H

Glassberg, J

Andideh, E

Jasper, C

Hoover, A

Agarwal, A

Rendon, M

机构：

[1] Univ Florida, SWAMP Ctr, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Intel Corp, Portland, OR 97124 USA

[3] Motorola Inc, Mesa, AZ 85202 USA

[4] Eaton Corp, Beverly, MA 01915 USA

[5] Motorola Inc, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of laser thermal processing (LTP) on implantation-induced defect evolution and transient enhanced diffusion (TED) of boron was investigated. A 270-Angstrom-thick amorphous layer formed by 10 keV Si+ implantation was melted and regrown using a 20 ns ultraviolet laser pulse. Transmission electron microscopy revealed that recrystallization of the amorphous layer following LTP results in a high concentration of stacking faults and microtwins in the regrown region. Also, the end-of-range loop evolution during subsequent 750 degrees C furnace annealing, is different in a LTP sample compared to a control sample. Secondary ion mass spectroscopy of a boron marker layer 6000 Angstrom below the surface showed that LTP alone produced no enhanced diffusion. However, during subsequent furnace annealing, the boron layer in the LTP sample experienced just as much TED as in the control sample which was only implanted and furnace annealed. These results imply that laser melting and recrystallization of an implantation-induced amorphous layer does not measurably reduce the excess interstitials released from the end-of-range implant damage. (C) 1999 American Institute of Physics. [S0003-6951(99)00149-7].

引用

页码：3659 / 3661

页数：3

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