Coverage dependent structure of electrochemically deposited Cu on p-GaAs(100) in H2SO4 solution determined by in situ surface X-ray absorption fine structure spectra

被引:5
作者
Kondo, T
Tamura, K
Koinuma, M
Oyanagi, H
Uosaki, K
机构
[1] HOKKAIDO UNIV, GRAD SCH SCI, DIV CHEM, PHYS CHEM LAB, SAPPORO, HOKKAIDO 060, JAPAN
[2] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN
关键词
D O I
10.1246/cl.1997.761
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In situ surface X-ray absorption fine structure technique was applied to study the structures of electrochemically deposited Cu on a p-GaAs(100) electrode with various coverage. Extended X-ray absorption fine structure (EXAFS) spectra of Cu were obtained with high SM ratio even from submonolayer deposit. EXAFS data showed that the Cu clusters were formed on the p-GaAs(100) electrode as the deposition exceeded more than one monolayer. The structure of the submonolayer deposit was different from that of the bulk deposit. The neighboring atoms in the latter are only Cu of the fee structure but those in the former are O and Cu of shorter bond length.
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页码:761 / 762
页数:2
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