Properties of interface-engineered high T-c Josephson junctions

被引：189

作者：

Moeckly, BH

Char, K

机构：

[1] Conductus, Inc., Sunnyvale, CA 94086

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 17期

关键词：

D O I：

10.1063/1.120107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have created YBCO thin film ramp edge Josephson junctions by modification of the edge surface prior to counterelectrode deposition. No deposited interlayer or barrier layer is employed. These devices are uniform and reproducible, and they display resistively shunted junction current-voltage characteristics with excellent magnetic field modulation. IcRn values over the range 0.5-3 mV and corresponding R(n)A values of 6 x 10(-8)-1.2 x 10(-9) Omega cm(2) at 20 K are easily attained by varying the process. We believe these junctions offer significant promise as the building blocks of a high T-c electronics technology. (C) 1997 American Institute of Physics.

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页码：2526 / 2528

页数：3

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