Solid State Gas Sensor Research in Germany - a Status Report

被引:111
作者
Moos, Ralf [1 ]
Sahner, Kathy [1 ]
Fleischer, Maximilian [2 ]
Guth, Ulrich [3 ]
Barsan, Nicolae [4 ]
Weimar, Udo [4 ]
机构
[1] Univ Bayreuth, Funct Mat Lab, D-95440 Bayreuth, Germany
[2] Siemens AG, Corp Technol, D-81730 Munich, Germany
[3] Kurt Schwabe Res Inst Meinsberg, D-04720 Ziegra Knobelsdorf, Germany
[4] Univ Tubingen, Inst Phys Chem, D-72076 Tubingen, Germany
关键词
impedance spectroscopy; mixed potential; SnO2; Ga2O3; Kelvin probe; operando; RESISTIVE OXYGEN SENSORS; NIO SENSING ELECTRODE; ZEOLITE COVER LAYER; SELECTIVITY ENHANCEMENT; ELECTRICAL-PROPERTIES; ROOM-TEMPERATURE; HYDROCARBON SENSORS; STABILIZED ZIRCONIA; IMPEDANCE SPECTROSCOPY; SEMICONDUCTING OXIDES;
D O I
10.3390/s90604323
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This status report overviews activities of the German gas sensor research community. It highlights recent progress in the field of potentiometric, amperometric, conductometric, impedimetric, and field effect-based gas sensors. It is shown that besides step-by-step improvements of conventional principles, e. g. by the application of novel materials, novel principles turned out to enable new markets. In the field of mixed potential gas sensors, novel materials allow for selective detection of combustion exhaust components. The same goal can be reached by using zeolites for impedimetric gas sensors. Operando spectroscopy is a powerful tool to learn about the mechanisms in n-type and in p-type conductometric sensors and to design knowledge-based improved sensor devices. Novel deposition methods are applied to gain direct access to the material morphology as well as to obtain dense thick metal oxide films without high temperature steps. Since conductometric and impedimetric sensors have the disadvantage that a current has to pass the gas sensitive film, film morphology, electrode materials, and geometrical issues affect the sensor signal. Therefore, one tries to measure directly the Fermi level position either by measuring the gas-dependent Seebeck coefficient at high temperatures or at room temperature by applying a modified miniaturized Kelvin probe method, where surface adsorption-based work function changes drive the drain-source current of a field effect transistor.
引用
收藏
页码:4323 / 4365
页数:43
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