Anistropic multi-step etch processes of silicon

被引:19
作者
Fruhauf, J
Hannemann, B
机构
[1] Tech. University Chemnitz-Zwickau, Department of Electrical Engineering
关键词
D O I
10.1088/0960-1317/7/3/015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The aim of this work is the extension of shape plurality in silicon bulk micromechanics created by anisotropic chemical wet etching with a combination of two or more etch steps. The design of etch masks requires knowledge of the kind and etch rate of crystallographic faces which develop at the sidewalls of the underetched edges of the mask. New or improved micromechanical and micro-optical elements can be obtained by combining typical sidewalls.
引用
收藏
页码:137 / 140
页数:4
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