Selective plasma-induced deposition of fluorocarbon films on metal surfaces for actuation in microfluidics

被引:37
作者
Bayiati, P [1 ]
Tserepi, A [1 ]
Gogolides, E [1 ]
Misiakos, K [1 ]
机构
[1] Inst Microelect NCSR Demokritos, Aghia Paraskevi 15310, Greece
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 04期
关键词
D O I
10.1116/1.1764815
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The present work focuses on the selective deposition of fluorocarbon (FC) films on metal surfaces, aluminum in specific, over SiO2 surfaces, in order to obtain surfaces of distinct wettability. If this is achieved, hydrophobic/hydrophilic patterning of substrates would be feasible by means of a self-aligned and relatively simple method. For the selection of conditions appropriate for selective deposition of FC films on Al over SiO2, plasma parameters such as plasma power, bias voltage, electrode temperature, and gas composition were varied. The selectivity of the deposition is optimized through proper selection of the deposition conditions, mainly gas mixture composition and deposition time, and is demonstrated by means of contact angle measurements on Al and SiO2 surfaces. Contact angles are measured without and with voltage application between the droplet and the surface to induce electrowetting. Contact angles vary as a function of the applied voltage and in combination with measured contact angle hysteresis dictate the voltage range necessary for droplet actuation. The results demonstrate that optimization of the electrowetting properties of such plasma-deposited films is necessary for rendering feasible the use of such films in electrowetting-based actuation of microfluidic devices with application of relatively small voltages. (C) 2004 American Vacuum Society.
引用
收藏
页码:1546 / 1551
页数:6
相关论文
共 16 条
[1]   Morphological and structural study of plasma deposited fluorocarbon films at different thicknesses [J].
Cicala, G ;
Milella, A ;
Palumbo, E ;
Favia, P ;
d'Agostino, R .
DIAMOND AND RELATED MATERIALS, 2003, 12 (10-11) :2020-2025
[2]   Application of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics [J].
Endo, K ;
Tatsumi, T ;
Matsubara, Y ;
Horiuchi, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A) :1809-1814
[3]   Characterization of CFx films plasma chemically deposited from C3F8/C2H2 precursors [J].
Koshel, D ;
Ji, H ;
Terreault, B ;
Côté, A ;
Ross, GG ;
Abel, G ;
Bolduc, M .
SURFACE & COATINGS TECHNOLOGY, 2003, 173 (2-3) :161-171
[4]   Observation of surface reaction layers formed in highly selective SiO2 etching [J].
Matsui, M ;
Tatsumi, T ;
Sekine, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04) :1282-1288
[5]   The property of plasma-polymerized fluorocarbon film in relation to CH4/C4F8 ratio and substrate temperature [J].
Matsumoto, Y ;
Ishida, M .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 83 (1-3) :179-185
[6]  
OERLEIN G, 1994, J VAC SCI TECHNOL A, V12, P333
[7]  
OERLEIN G, 1997, SURF SCI, V386, P222
[8]   Electrowetting-based actuation of liquid droplets for microfluidic applications [J].
Pollack, MG ;
Fair, RB ;
Shenderov, AD .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1725-1726
[9]   Fluid control in multichannel structures by electrocapillary pressure [J].
Prins, MWJ ;
Welters, WJJ ;
Weekamp, JW .
SCIENCE, 2001, 291 (5502) :277-280
[10]   SiO2/Si selectivity in high density CHF3/CH4 plasmas:: Role of the fluorocarbon layer [J].
Rolland, L ;
Peignon, MC ;
Cardinaud, C ;
Turban, G .
MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :375-379