Optical modulation by carrier depletion in a silicon PIN diode

被引：67

作者：

Marris-Morini, Delphine

Le Roux, Xavier

Vivien, Laurent

Cassan, Eric

Pascal, Daniel

Halbwax, Mathieu

Maine, Sylvain

Laval, Suzanne

Fedeli, Jean Marc

Damlencourt, Jean Francois

机构：

[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] CEA, DRT, LETI, F-38054 Grenoble 9, France

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 22期

关键词：

D O I：

10.1364/OE.14.010838

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V pi L pi of 3.1 V. cm has been obtained at 1.55 mu m. Numerical simulations show a good agreement between experimental and theoretical index variations. (c) 2006 Optical Society of America.

引用

页码：10838 / 10843

页数：6