Optical characterisation of MOVPE-grown Ga1-xMnxAs semimagnetic semiconductor layers

被引：30

作者：

Hartmann, T

Lampalzer, M

Stolz, W

Megges, K

Lorberth, J

Klar, PJ

Heimbrodt, W

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Marburg, Dept Chem, D-35032 Marburg, Germany

来源：

THIN SOLID FILMS | 2000年 / 364卷 / 1-2期

关键词：

metal-organic vapour-phase epitaxy; diluted magnetic semiconductor; GaAs; magneto-optics;

D O I：

10.1016/S0040-6090(99)00897-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For the first time, a successful growth of Ga1-xMnxAs layers on (100)GaAs substrates by metal-organic vapour-phase epitaxy is reported. Optical and magneto-optical spectroscopy of the E-0, E-1 and E-1 + Delta(1) transitions is possible due to the high structural quality of the samples. A strong exchange interaction is found in the Ga1-xMnxAs layers between the magnetic moments of manganese and the excitonic states, which exhibits an effective ferromagnetic coupling. The Mn concentrations in the layers can be estimated by two different and independent optical methods (i) from the Zeeman splitting of the E-0 excitons and (ii) from the red-shift of the E-1 transition due to the p-doping with Mn. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：209 / 212

页数：4

共 18 条

[1] Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters [J].