Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder

被引:112
作者
Qin, GG
Lin, J
Duan, JQ
Yao, GQ
机构
[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
[2] BEIJING UNIV,DEPT CHEM,BEIJING 100871,PEOPLES R CHINA
关键词
D O I
10.1063/1.117029
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultraviolet (UV) light emission with almost the same peak wavelengths from thermally oxidized porous silicon (OPS) (340, 355, and 370 nm) and SiO2 powder (340, 350, and 370 nm) has been observed. Photoluminescence excitation spectra of OPS without Si nanoscale particles (SNP) and those of SiO2 powder are very similar, however, very different from those of the OPS with SNP. Three types of luminescence centers with luminescence wavelengths around 350 nm are responsible for UV light emission, and photoexcitation in OPS with SNP occurs in SNP-as well as in Si oxide layers covering SNP. (C) 1996 American Institute of Physics.
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页码:1689 / 1691
页数:3
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