Vertical cavity lasers on p-doped substrates

被引：17

作者：

Lear, KL ^{[1
]}

Hou, HQ ^{[1
]}

Banas, JJ ^{[1
]}

Hammons, BE ^{[1
]}

Furioli, J ^{[1
]}

Osinski, M ^{[1
]}

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 09期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers; RESISTANCE;

D O I：

10.1049/el:19970492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n-type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.

引用

页码：783 / 784

页数：2

共 9 条

[1] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

GEIB, KM .

ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044

[2] HIGH SINGLE-TRANSVERSE-MODE OUTPUT FROM EXTERNAL-CAVITY SURFACE-EMITTING LASER-DIODES [J].

HADLEY, MA ;

WILSON, GC ;

LAU, KY ;

SMITH, JS .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1607-1609

[3] CARBON DOPING CHARACTERISTICS OF GAAS AND AL0.3GA0.7AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4 [J].

KIM, SI ;

KIM, Y ;

KIM, MS ;

KIM, CK ;

MIN, SK ;

LEE, C .

JOURNAL OF CRYSTAL GROWTH, 1994, 141 (3-4) :324-330

[4] N-TYPE AND P-TYPE DOPANT PROFILES IN DISTRIBUTED BRAGG REFLECTOR STRUCTURES AND THEIR EFFECT ON RESISTANCE [J].

KOPF, RF ;

SCHUBERT, EF ;

DOWNEY, SW ;

EMERSON, AB .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1820-1822

[5]

Lear KL, 1996, APPL PHYS LETT, V68, P605, DOI 10.1063/1.116482

[6]

LEAR KL, 1994, VERTICAL CAVITY SURF, V6

[7]

LEI C, 1996, HIGH SPEED OPTOELECT, V2

[8]

OSINSKI M, UNPUB CURRENT UNIFOR

[9] BAND-GAP ENGINEERED DIGITAL ALLOY INTERFACES FOR LOWER RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

PETERS, MG ;

THIBEAULT, BJ ;

YOUNG, DB ;

SCOTT, JW ;

PETERS, FH ;

GOSSARD, AC ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1993, 63 (25) :3411-3413

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