BAND-GAP ENGINEERED DIGITAL ALLOY INTERFACES FOR LOWER RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引:81
作者
PETERS, MG
THIBEAULT, BJ
YOUNG, DB
SCOTT, JW
PETERS, FH
GOSSARD, AC
COLDREN, LA
机构
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
关键词
D O I
10.1063/1.110156
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2-3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600-degrees-C growth temperatures.
引用
收藏
页码:3411 / 3413
页数:3
相关论文
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