HIGH WALLPLUG EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING LASERS USING LOWER BARRIER DBR MIRRORS

被引：27

作者：

PETERS, MG

PETERS, FH

YOUNG, DB

SCOTT, JW

THIBEAULT, BJ

COLDREN, LA

机构：

[1] University of California, Santa Barbara

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lower energy barrier p-type Al0.67Ga0.33As/GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86 V, and a record high power-conversion efficiency of 14.9% was achieved.

引用

页码：170 / 172

页数：3

共 4 条

[1] INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
GEELS, RS
CORZINE, SW
COLDREN, LA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1359 - 1367
[2] LOW THRESHOLD, HIGH-POWER, VERTICAL-CAVITY SURFACE-EMITTING LASERS
GEELS, RS
COLDREN, LA
[J]. ELECTRONICS LETTERS, 1991, 27 (21) : 1984 - 1985
[3] KOJIMA K, 1992, 13TH IEEE INT SEM LA, P3
[4] VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FABRICATED BY PHASE-LOCKED EPITAXY
WALKER, JD
KUCHTA, DM
SMITH, JS
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2079 - 2081

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