HIGH-POWER VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：43

作者：

PETERS, FH

PETERS, MG

YOUNG, DB

SCOTT, JW

THIBEAULT, BJ

CORZINE, SW

COLDREN, LA

机构：

[1] Electrical and Computer Engineering Department, University of California, Santa Barbara

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting lasers have been produced which emit greater than 100 mW CW output power. The devices have been optimised for operation at high temperatures, and are heatsunk to improve operation at large bias currents.

引用

页码：200 / 201

页数：2

共 5 条

[1] INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
GEELS, RS
CORZINE, SW
COLDREN, LA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1359 - 1367
[2] LOW THRESHOLD, HIGH-POWER, VERTICAL-CAVITY SURFACE-EMITTING LASERS
GEELS, RS
COLDREN, LA
[J]. ELECTRONICS LETTERS, 1991, 27 (21) : 1984 - 1985
[3] PETERS MG, 1993, P OFC 93 SAN JOSE
[4] TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS
TELL, B
BROWNGOEBELER, KF
LEIBENGUTH, RE
BAEZ, FM
LEE, YH
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (06) : 683 - 685
[5] VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FABRICATED BY PHASE-LOCKED EPITAXY
WALKER, JD
KUCHTA, DM
SMITH, JS
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2079 - 2081

← 1 →