The dipole moments of H2, HD and D2 molecules and their concentrations in silicon

被引：6

作者：

Newman, RC

Pritchard, RE

Tucker, JH

Lightowlers, EC

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, CEMD, London SW7 2BZ, England

[2] Kings Coll London, Dept Phys, London WC2R 2LS, England

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

silicon; hydrogen molecules; dipole moments; infra-red absorption;

D O I：

10.1016/S0921-4526(99)00436-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The relative strengths of infrared active modes of H-2, HD and D-2, present as H-2-O-i centres (v(1) and v(2)), or isolated molecules (v(3)) in Si pre-heat treated at 1300 degrees C in a 50 : 50 mixture of Hz and D-2 gases are reviewed. The effective charges eta(nu(1HH)) and eta(nu(2HH)) are equal to eta(nu(1DD)) and eta(nu(2DD)), respectively, but eta(nu(3HH)) = 0.08e is larger than eta(nu(3DD)) = 0.05e. The relative strengths of the three HD modes are smaller than expected by a factor of similar to 3. Possible reasons for this discrepancy, including isotopic exchange, are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：164 / 166

页数：3

共 9 条

[1] HYDROGEN SOLUBILITY IN SILICON AND HYDROGEN DEFECTS PRESENT AFTER QUENCHING [J].