Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces

被引：9

作者：

Ishikawa, F

Hasegawa, H

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期

关键词：

cathodoluminescence; heterointerface; depth-resolved; non-destructive; InGaP;

D O I：

10.1016/S0169-4332(01)00927-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

As a new approach for contactless and non-destructive characterization method of buried multi-layer heterointerfaces, acceleration voltage-dependence of cathodoluminescence (CL) spectra is investigated for various InGaP/GaAs multi-layer heterostructures. The plot of CL intensity vs. acceleration voltage for a multi-layer heterostructure is defined as the cathodoluminescence in-depth spectrum (CLIS). Experimental CLIS spectra on InGaP/GaAs single heterostructures and quantum well structures grown on GaAs by MOVPE and by GSMBE using TBP as the P source demonstrate that CLIS technique is very powerful to obtain depth-resolved information on multi-layer heterostructures. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：508 / 512

页数：5

共 10 条

[1] Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers [J].