Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers

被引：6

作者：

Adamowicz, B

Hasegawa, H

机构：

[1] Silesian Tech Univ, Inst Phys, Div Semicond Surface Phys, Gliwice, Poland

[2] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido, Japan

[3] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido, Japan

来源：

THIN SOLID FILMS | 2000年 / 367卷 / 1-2期

关键词：

AlGaAs photoluminescence; surface charge carriers recombination; surface state density; passivation by interface control layer;

D O I：

10.1016/S0040-6090(00)00685-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rigourous computer analysis of the band-edge PL efficiency (I-PL/Phi) and the effective surface recombination velocity (S-eff) was performed for n-Al(0.33)GaO(0.67)AS surfaces versus the surfacestate density,N-ss0, in wide range of photon flux density, Phi (from 10(12) to 10(25) cm(-2) s(-1)). The behavior of electron (E-Fn) and hole (E-Fp) quasi-Fefini levels was also studied. Tn addition, the simulated I-PL/Phi-Phi dependencies have been compared with experimental data for MBE-grown AlcaAs wafers passivated by ultrathin Si interface control layer. 6 2000 EIsevier Science S.A. All rights reserved.

引用

页码：180 / 183

页数：4

共 9 条

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[2] Computer analysis of surface recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity [J].