Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

Detailed excitation power dependence of PL intensity from the near surface quantum wells and wiles passivated by the Si ICL technique were measured in order to Set quantitative information on the properties of the passivated surfaces. The conventional PL analysis assuming constant surface recombination velocity is shown to be utterly inadequate. A novel elicitation power dependent PL theory was developed and applied to the computer analysis of PL behavior of near surface quantum wells. It is shown that the navel PL theory can explain the experimentally observed behavior very well. The Si ICL technique is concluded to br extremely powerful in drastically reducing the surface state density.