MORE THAN 10(3) TIMES PHOTOLUMINESCENCE INTENSITY RECOVERY BY SILICON INTERFACE-CONTROL-LAYER-BASED SURFACE PASSIVATION OF NEAR-SURFACE QUANTUM-WELLS

被引：25

作者：

HASEGAWA, H ^{[1
]}

KODAMA, S ^{[1
]}

KOYANAGI, S ^{[1
]}

HASHIZUME, T ^{[1
]}

机构：

[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4B期

关键词：

NEAR-SURFACE QUANTUM WELL; SURFACE PASSIVATION; INTERFACE CONTROL LAYER; SURFACE STATES; PL; ALGAAS; GAAS;

D O I：

10.1143/JJAP.34.L495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The latest version of the silicon interface control layer (ICL)-based passivation process utilizing a Si/Si3N4 double-layer ICL was applied to passivation of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As near-surface quantum wells (QWs). Its effectiveness was investigated using normalized PL intensities from passivated and unpassivated QWs. Complete recovery of PL intensity was achieved by the novel passivation with an observed maximum recovery factor of 1.4x10(3).

引用

页码：L495 / L498

页数：4

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